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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

Automotive ASFETs for Airbag Applications

Enhanced SOA for improved linear mode performance

When choosing a MOSFET to regulate the supply voltage to the squibs in an airbag system, the choice has traditionally been limited to older generations of silicon technology, such as the legacy wire-bonded DPAK package. This is due to the safe operating area (SOA) being greater for trench technologies with wider cell pitch when operating in linear mode. The MOSFET must be able to handle a current proportional to the number of squibs in the system, whilst regulating their supply voltage for long enough to activate the airbags. Nexperia have designed a range of Application Specific MOSFETS (ASFETs) to address the specialised needs of airbag applications, focused on enhanced SOA performance for improved linear mode.

ASFETs for Airbag Applications

用于以太網(wǎng)供電(PoE)的ASFET專為配合使用最新的高功率、PSE控制器而設(shè)計(jì)：

  • MOSFET的主要作用是在向網(wǎng)絡(luò)添加電容負(fù)載時(shí)安全地控制沖擊電流
  • 擴(kuò)展的增強(qiáng)安全操作區(qū)(SOA)能夠承受短路故障情況引起的功耗，直到PSE控制器檢測(cè)到故障并關(guān)閉為止
  • 增強(qiáng)的保護(hù)——我們的MOSFET提供的保護(hù)功能超過(guò)競(jìng)爭(zhēng)性器件兩倍多。在電纜短路故障期間，我們用于PoE的ASFET可在+60 ℃的環(huán)境溫度下安全耗散高達(dá)30 W的電力長(zhǎng)達(dá)20 ms
  • 要將更多高功率PoE端口壓縮到緊湊型路由器/交換機(jī)中，需要LFPAK33封裝的熱效率和緊湊尺寸能夠提供更高的功率密度。
   
    

電源設(shè)備/以太網(wǎng)供電

 

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Automotive ASFETs for Airbag Applications
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產(chǎn)品

型號(hào) 描述 狀態(tài) 快速訪問(wèn)
BUK9M20-60EL Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
BUK9M31-60EL Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
BUK9M67-60EL Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
BUK9Y13-60EL Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
BUK9Y22-60EL Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
BUK9Y7R0-60EL Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
BUK9Y8R8-60EL Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
Visit our documentation center for all documentation

Application note (10)
文件名稱 標(biāo)題 類型 日期
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN90003.pdf LFPAK MOSFET thermal design guide Application note 2023-08-22
AN50016.pdf MOSFETs for airbag applications Application note 2022-05-19
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN11261.pdf RC Thermal Models Application note 2021-03-18
AN50001.pdf Reverse battery protection in automotive applications Application note 2021-01-12
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN90019.pdf LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout Application note 2020-07-20
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21

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