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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

NEVB-NID1100 1.5 V to 5.5 V, 1 A, Ideal Diode with Forward Voltage Blocking Evaluation Board

The NEVB-NID1100 evaluation board is a two-layer PCB equipped with two NID1100 ideal diodes and one PMOS transistor. It allows users to explore the device's behavior under various application conditions.

Key features & benefits

  • Input operating voltage range (VIN) 1.5 V to 5.5 V
  • Continuous output current 1 A
  • Three supply inputs VIN1, VIN2, VIN3
  • Two optional USB-C supply inputs for VIN1 and VIN2
  • Access to all device pins
  • Use case selection by means of jumpers
  • Short circuit testing

板上的產(chǎn)品 (1)

Type number Description Status Quick access
NID1100GV 1.5 V to 5.5 V, 1 A, ideal diode with forward voltage blocking Production

板上的產(chǎn)品 (1)

Type number Description Status Quick access
NID1100GV 1.5 V to 5.5 V, 1 A, ideal diode with forward voltage blocking Production

文檔 (1)

文件名稱 標(biāo)題 類型 日期
UM90044 NID1100, 1.5 V to 5.5 V, 1 A, ideal diode with forward voltage blocking evaluation board User manual 2025-01-17